PURPOSE: To uniformly form a film at a high speed on not only a substrate of an ordinary size but a large-sized substrate as well.

CONSTITUTION: An ion source 1 is disposed forward in the transporting direction A of the substrate 3 and an ion beam can be made incident on a target 2 at the angle of high sputtering efficiency. The target 2 is disposed as nearly parallel as possible with the transporting direction A of the substrate 3. further, the substrate 3 is provided to be changed by 90° to the transporting direction B from the transporting direction A in a treatment chamber 8. As a result, the high-speed film formation even on the large-sized substrate is enabled and further the mass production of the large-sized substrate is possible.