ION INJECTION METHOD AND ION INJECTOR

Title:

ION INJECTION METHOD AND ION INJECTOR

Document Type and Number:

Japanese Patent JPS5212579

Kind Code:

A

Abstract:

PURPOSE: An ion injection method which makes a diffusion layer without crystal defect in a selective region of a semi-conductor region, whose conductive type is different from that of the above region.

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Inventors:

OONO MINORU

Application Number:

JP8829775A

Publication Date:

January 31, 1977

Filing Date:

July 21, 1975

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01J37/317; H01J37/30; H01L21/265; (IPC1-7): H01J37/30; H01L21/265

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