To make it possible to collectively process multiple points with a single laser without difficulty by enhancing utilization efficiency of irradiation energy of a laser beam.
A laser processing method for irradiating a surface of a silicon substrate 1 coated by an inorganic insulation film 2 with a laser beam to thereby locally removing the insulation film 2, comprises the steps of: irradiating the surface of the substrate 1 with a first laser beam L1, which is in an ultraviolet region and is set at a strength at which at least the surface of the substrate 1 is melted, to thereby melt the surface of the substrate 1; and irradiating a melted part MP of the substrate 1 with a second laser beam L2, which has a wavelength longer than that of the first laser beam L1 and is set at a certain strength, simultaneously with the irradiation with the first laser beam L1 or with a certain delay time from the irradiation with the first laser beam L1 to thereby evaporate a material of the substrate.
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YANAGAWA YOSHIKATSU
KIGUCHI TETSUYA
Haruyuki Nishiyama
Shoichi Okuyama
Moriaki Ogawa
Kunio Araki
Taiki Kaji