Title:
レーザー加工方法およびレーザー加工装置
Document Type and Number:
Japanese Patent JP4231349
Kind Code:
B2
Abstract:
A laser beam processing method for a semiconductor wafer having a low-dielectric insulating film formed on the front surface of a semiconductor substrate thereof, a plurality of circuits sectioned by streets into a lattice pattern, and metal patterns for testing formed partially on each street. The method includes a laser beam processing step for applying a laser beam to the positions of areas at which the metal patterns are located, and to the low-dielectric insulating film, under different processing conditions so as to remove the metal patterns and the low-dielectric insulating film without damaging the substrate and its circuits.
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Inventors:
Koichi Shigematsu
Naoki Omiya
Toshiyuki Yoshikawa
Naoki Omiya
Toshiyuki Yoshikawa
Application Number:
JP2003190103A
Publication Date:
February 25, 2009
Filing Date:
July 02, 2003
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
B23K26/40; B23K26/351; B23K26/36; B23K26/361; C30B1/00; H01L21/02; H01L21/20; H01L21/301; H01L21/302; H01L21/304; H01L21/3105; H01L21/311; H01L21/321; H01L21/3213; H01L21/68; H01L23/544; H05K3/02; B23K101/40
Domestic Patent References:
| JP2002329686A | ||||
| JP6224296A | ||||
| JP2000031649A | ||||
| JP5267257A | ||||
| JP2002224872A | ||||
| JP8052579A | ||||
| JP8224679A | ||||
| JP5115991A | ||||
| JP10296466A |
Attorney, Agent or Firm:
Naozumi Ono
Sachiko Okunuki
Sachiko Okunuki