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Title:
LEVEL DOWN CIRCUIT AND HIGH SIDE SHORT CIRCUIT PROTECTION CIRCUIT
Document Type and Number:
Japanese Patent JP2015159471
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a level down circuit capable of preventing false detection of a low side signal detection circuit due to change in the high side floating potential HS, and to provide a high side short circuit protection circuit.SOLUTION: A level down circuit includes a first series circuit (P type channel MOSFETQ1, resistor R1) connected between a high side power supply voltage VB and a common potential COM, and converting a detection signal detected on the high side into a voltage signal VA with reference to the common potential COM, a reference voltage generation circuit (P type channel MOSFETQ2, resistor R2) generating a reference voltage VREF for canceling variation of the voltage signal VA due to a floating potential HS, and a comparator COMP2 generating a detection signal with reference to the common potential COM, by comparing the voltage signal VA converted by the first series circuit with the reference voltage VREF generated by the reference voltage generation circuit.

Inventors:
SAKAI KUNITAKA
MAEKAWA YUYA
Application Number:
JP2014033980A
Publication Date:
September 03, 2015
Filing Date:
February 25, 2014
Export Citation:
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Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H03K19/0185; H03K17/08; H03K19/003
Domestic Patent References:
JP2013168714A2013-08-29
JP2006270382A2006-10-05
JP2004304929A2004-10-28
JP2011029818A2011-02-10
JP2005184656A2005-07-07
JP2005176174A2005-06-30
JP2001068947A2001-03-16
JP2002026714A2002-01-25
Attorney, Agent or Firm:
Shiroyuki Hori
Yukihiko Maejima



 
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