To provide a highly reliable, high emission output light-emitting element with high yield, and to provide an epitaxial wafer for light-emitting element, and to provide its manufacturing method.

In a light-emitting element where at least a reflective layer (3), a first conductivity type clad layer (4) composed of (AlxGa1-x)yIn1-yP (0x1, 0y1), an active layer (5), a second conductivity type clad layer (6), a window layer (8), an upper surface electrode (9) on the window layer (8), and a lower surface electrode (1) on the backside of the substrate (2) are provided on the substrate (2), a P-based layer having a film thickness of 400 nm or above is formed on the interface of an As-based layer and a P-based layer between the substrate (2) and the active layer (5) between the interface closest to the active layer (5) and the active layer (5).