磁気トンネル接合型磁気ランダムアクセスメモリセルおよびその製造方法、ならびに磁気トンネル接合型磁気ランダムアクセスメモリセルアレイおよびその製造方法

Title:

Document Type and Number:

Japanese Patent JP5068939

Kind Code:

B2

Abstract:

An MTJ element (10) is formed between orthogonal word (20) and bit lines (30). The bit line (30) is a composite line which includes a high conductivity layer (34) and a soft magnetic layer (32) under the high conductivity layer (34). During operation, the soft magnetic layer (32) concentrates the magnetic field of the current and, due to its proximity to the free layer (70), it magnetically couples with the free layer (70) in the MTJ (10). This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer (70) during formation.

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Inventors:

Guo Imin
Minoru Yasushi
Go Wang
Ishinishi Increase

Application Number:

JP2005180553A

Publication Date:

November 07, 2012

Filing Date:

June 21, 2005

Export Citation:

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Assignee:

Headway Technologies, Inc.

International Classes:

H01L27/105; A61K31/404; C07D209/08; G11C11/16; H01F10/32; H01L21/8246; H01L27/22; H01L43/08

Domestic Patent References:

JP2004165661A

Foreign References:

WO2000072324A1

Attorney, Agent or Firm:

Yasushi Santanzaki
Yoichiro Fujishima

Previous Patent: JPS5068938

Next Patent: JPS5068940