MAGNETORESISTIVE EFFECT ELEMENT AND ITS FABRICATING METHOD AND METHOD FOR FORMING COMPOUND MAGNETIC THIN FILM

Japanese Patent JP3583091

B2

PROBLEM TO BE SOLVED: To improve heat resistance, magnetic field shift, and the like, of a magnetoresistive effect element.
SOLUTION: The magnetoresistive effect element comprises a multilayer fixed magnetic layer comprising at least one nonmagnetic layer and magnetic layers sandwiching the nonmagnetic layer wherein the magnetic layers are coupled magnetostatically through the nonmagnetic layer. The magnetoresistive effect element exhibits an improved heat resistance. A magnetoresistive effect element where the multilayer fixed magnetic layer is coupled magnetostatically or antiferromagnetically to cause negative magnetic coupling is also provided. This element reduces shift of magnetic field. Furthermore, a magnetoresistive effect element where at least one of the magnetic layers sandwiching an intermediate layer contains an oxide ferrite having an orientation face of (100), (110) or (111) and an external magnetic field is introduced into that orientation face is provided. This elements exhibits a high variation rate of resistance by magnetic field.

Masayoshi Hiramoto
Hiroshi Sakaki
Hideaki Adachi
Nozomi Matsukawa
Kenji Iijima
Satomi third son

JP2001268655A

October 27, 2004

September 05, 2001

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Matsushita Electric Industrial Co., Ltd

G01R33/09; C23C14/34; G11B5/39; H01F10/08; H01F10/20; H01F10/32; H01F41/14; H01F41/18; H01L21/8246; H01L27/105; H01L43/08; H01L43/12; (IPC1-7): H01L43/08; G01R33/09; G11B5/39; H01F10/08; H01F41/14; H01L43/12

JP2002092825A
JP2000156530A
JP2000215418A
JP2000020926A
JP2000200403A
JP2001297913A
JP10255231A
JP2000293823A
JP8279117A
JP11007626A
JP61121404A
JP60095721A
JP62001154A
JP2229414A
JP10041561A

Ikeuchi, Sato & Partners

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