MANUFACTURE OF CAPACITOR OF MEMORY DEVICE

Japanese Patent JP3683764

B2

PROBLEM TO BE SOLVED: To restrain a Ta2O5 capacitor effective oxide film from varying in thickness even after a thermal treatment is carried out and improve an electrode material in step coverage, by a method wherein a CVD TiN film, an MOCVD TiN film, and a polysilicon film are successively laminated for the formation of an electrode on a Ta2O5 dielectric thin film.
SOLUTION: A polysilicon film 301 is vacuum deposited as a lower electrode of a Ta2O5 capacitor, and then the surface of the film 301 is subjected to an RTN treatment. Then, a Ta2O5 film 302 is deposited as a dielectric thin film through an LPCVD method. The Ta2O5 film 302 is subjected to N2O plasma annealing at 300 to 500°C to remove impurities from it, and then the Ta2O5 film 302 is crystallized. Then, a CVD TiN film 303 and an MOCVD TiN film 304 are evaporated. A doped polysilicon film is deposited on the MOCVD TiN film 304 and then thermally treated. By this setup, the effective oxide film of a Ta2O5 capacitor is restrained from varying in thickness, and an electrode material can be improved in step coverage.

WO/2021/068225	METHODS AND STRUCTURES FOR DIE-TO-DIE BONDING
JP4377721	Manufacturing method of semiconductor devices
JP2007110110	METHOD OF FORMING TRENCH TRANSISTOR AND PERTINENT TRENCH TRANSISTOR

Song Song
Hayashi Sun

JP36249399A

August 17, 2005

December 21, 1999

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HYNIX SEMICONDUCTOR INC.

H01L27/108; C23C16/34; H01L21/02; H01L21/8242; H01L21/8246; H01L27/02; H01L27/105; H01L21/285; H01L21/316; (IPC1-7): H01L27/105; H01L21/8242; H01L27/108

JP11121713A
JP10135429A
JP10056017A
JP9199679A
JP9121035A
JP9116115A
JP7202019A
JP7169917A
JP7161827A
JP11509684A

WO1998031052A1
WO1996036993A1

Shukichi Nakagawa
Hiroyuki Nakagawa

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