Title:
MANUFACTURE OF FET ELECTRODE
Document Type and Number:
Japanese Patent JPH0774369
Kind Code:
A
Abstract:
PURPOSE: To provide a method of manufacturing FET electrodes, whereby a FET provided with dual gate electrodes separate from each other by a narrow distance can be manufactured with high controllability.
CONSTITUTION: In a method of manufacturing the electrodes of a dual gate type FET, a first process wherein a first gate electrode 10b and a second gate electrode 10c are formed at the same time as connected together in an integral structure and a second process wherein the first gate electrode 10b and the second gate electrode 10c are separated from each other by etching or ion milling are provided.
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Inventors:
YOSHIDA KAZUHIRO
Application Number:
JP21752093A
Publication Date:
March 17, 1995
Filing Date:
September 01, 1993
Export Citation:
Assignee:
MURATA MANUFACTURING CO
International Classes:
H01L29/812; H01L21/338; H01L29/80; (IPC1-7): H01L29/80; H01L21/338; H01L29/812
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