Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59167030
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of contamination on the surface of the recessed part of a field region by a method wherein a recessed part is formed on the field region without performing a lift-off process. CONSTITUTION:A thermal oxide film 22 is formed on the element forming region located on an Si substrate 21, and a recessed part 23 is formed on the field region using said film 22 as a mask. Then, the film 22 is removed, and an SiO2 film 25 in the thickness same as or more of the stepping of the recessed part is formed on the whole surface of the substrate. Subsequently, a positive type resist film 26 which is thinner than the stepping of the recessed part 23 is formed as a spacer film on the recessed part located on the surface of the film 25. Then, a mixed resist film 27 is applied as a fluid substance. Subsequently, an etching is performed on the whole surface. At this time, the condition of etching is established in such a manner that the etching speed of the film 25 will be faster than that of the film 26. As a result, when the etching is performed until the substrate surface of the element forming region is exposed, a structure wherein the film 25 is buried in the field region can be obtained. Subsequently, an element forming process is started, gate oxide films 281 and 282 are formed, and gate electrodes 291 and 292 are formed thereon.
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Inventors:
NAKAYAMA RIYOUZOU
Application Number:
JP4036183A
Publication Date:
September 20, 1984
Filing Date:
March 11, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/76; H01L21/302; H01L21/3065; H01L21/762; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Takehiko Suzue