Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60113477
Kind Code:
A
Abstract:
PURPOSE:To prevent the damage of the base non single crystal semiconductor containing amorphous silicon by a method wherein a photo transmitting conductive film of sublimation and a metallic conductor excellent in conductivity and a heat-resistant insulation film excellent in heat retaining property thereon are formed. CONSTITUTION:An amorphous semiconductor is formed on a metallic substrate 1 by plasma vapor phase reaction. This semiconductor 4 consists of an I-type amorphous semiconductor 2 and an N type microcrystallized semiconductor 3. The photo transmitting conductive film 5 is formed thereon by the electron beam evaporation method, and further the metallic conductor 6 is evaporated by the electron beam evaporation method. Moreover, an Si nitride film 12, an insulation film, is formed thereon by the reaction of SiH4 or Si2H6 with NH3 by increasing the substrate temperature. The metallic conductor is irradiated with a laser beam, and thus an open groove 10 or an aperture is formed by removing residuals in the region to be irradiated and in its neighborhood.
Inventors:
YAMAZAKI SHIYUNPEI
ITOU KENJI
WATABE SATSUKI
ITOU KENJI
WATABE SATSUKI
Application Number:
JP22117083A
Publication Date:
June 19, 1985
Filing Date:
November 24, 1983
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/0248; H01L31/02; H01L31/20; (IPC1-7): H01L31/02; H01L31/08
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