Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6136950
Kind Code:
A
Abstract:
PURPOSE:To reduce contact resistance between an electrode wiring and a NiCr group alloy thin-film resistor, and to minimize variation in a process of the resistance value of the thin-film resistor by forming the thin-film resistor onto an Si substrate through an insulating film, exposing the thin-film resistor in plasma and conducting the electrode wiring. CONSTITUTION:An N type epitaxial layer 2 a semiconductor element 3 and an insulating film 4 are formed onto an Si substrate 1, a NiCr film is deposited under a vacuum state, and a NiCr thin-film resistor 5 is shaped through photolithography. A photo-resist after etching NiCr is removed by an acid group chemical at that time, and the surface is exposed and treated in O2 plasma. Ac- cordingly, the contact resistance of a contact section 6 between a metallic wiring 7 and the thin-film resistor 5 can be brought to a small value while keeping variation in a process of the resistance value of the NiCr thin-film resistor 5 small.
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Inventors:
KIHARA HIDEYUKI
TAKIZAWA YUKIO
TAKIZAWA YUKIO
Application Number:
JP15966384A
Publication Date:
February 21, 1986
Filing Date:
July 30, 1984
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/768; H01L21/60; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Toshio Nakao