PURPOSE: To provide the manufacture of a solid-state image sensing element accurately determining the mutual relative location of a vertical charge transfer region, channel stop region and readout region and further accurately determining a polysilicon electrode relative to a sensor region.

CONSTITUTION: The method comprises a process for forming a thermal oxidation film 2 all over above a silicon substrate 1, process for forming a silicon nitride film 3 on the thermal oxidation film 2, process for forming a silicon nitride film pattern 3a on a channel stop region and readout-forming region, and on a region excepting the target mark of a scribe line, process for forming a vertical charge transfer region, process for forming a thick oxide film by a discrete insulating method, process for forming the channel stop region, process for forming the readout region, process for forming a polysilicon electrode and process for forming a sensor region.