MANUFACTURE OF THIN FILM TRANSISTOR

Japanese Patent JPH01171274

A

PURPOSE:To simplify manufacturing steps by forming an N-type gate electrode directly on a semiconductor film for the gate electrode so as to implant more N-type impurity than P-type impurity and indirectly a P-type source.drain regions through a gate oxide film by continuously ion-implanting two types of different impurities. CONSTITUTION:A gate oxide film 3 is formed on an active layer 3, an Si semiconductor film 4 is then formed, only the film 4 is patterned, and the film 3 remains as it is. B<+> is, for example, implanted as a P-type impurity under the condition of 3X10<15>/cm<2> of dose, and As<+> is, for example, subsequently implanted as an N-type impurity under the condition of 5X10<15>/cm<2> of dose. The B<+> is selectively implanted to a part which becomes the source.drain region of an active layer 2 by the continuous implanting, thereby forming source.drain region 7 on the layer 2. The B<+> implanted previously is compensated by the As<+> implanted later in the film 4 to reduce an N-type resistance. As a result, an N-type gate electrode 4' is formed.

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INAGI SHUNICHI
TERAO NORIYUKI

JP32919787A

July 06, 1989

December 25, 1987

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RICOH KK
RICOH GEN ELECTRON RES INST

H01L27/092; H01L21/8238; H01L27/08; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L27/08; H01L27/12; H01L29/78

Morio Sada (1 outside)

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