Title:
半導体集積回路装置の製造方法
Document Type and Number:
Japanese Patent JP4149095
Kind Code:
B2
Abstract:
A protection film is formed on a silicon oxide film 6 formed on the surface of a semiconductor substrate, a silicon oxide film is removed from a region where a thin gate-insulating film is to be formed by using, as a mask, a photoresist pattern that covers a region where a thick gate-insulating film is to be formed, and, then, the photoresist pattern is removed followed by washing. Then, the semiconductor substrate is heat-oxidized or a film is deposited thereon to form gate-insulating films having different thicknesses.
Inventors:
Takayuki Kanda
Atsushi Hiraiwa
Norio Suzuki
Satoshi Sakai
Shuji Ikeda
Yasuko Yoshida
Shinichi Horibe
Atsushi Hiraiwa
Norio Suzuki
Satoshi Sakai
Shuji Ikeda
Yasuko Yoshida
Shinichi Horibe
Application Number:
JP22599199A
Publication Date:
September 10, 2008
Filing Date:
August 10, 1999
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
H01L21/8234; H01L21/283; H01L21/316; H01L21/8238; H01L27/088; H01L27/092; H01L29/78
Domestic Patent References:
| JP10022397A | ||||
| JP10313106A |
Attorney, Agent or Firm:
Yamato Tsutsui
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