To provide a manufacturing device and a manufacturing method for a semiconductor single crystal by which a silicon single crystal having a desired defect region or a desired defect-free region can be easily manufactured in high yield.
The manufacturing device for a semiconductor single crystal is equipped with: a heat treatment furnace 10 to heat treat a silicon single crystal pulled by using a single crystal pulling device which grows the silicon single crystal while pulling from a silicon melt housed in a crucible; and a control means 11 to control the temperature in the heat treatment furnace 10. The control means 11 carries out first control of controlling the heat treatment furnace 10 rendering the silicon single crystal into a defect reset temperature, and a second control of controlling a temperature gradient in a first direction in the heat treatment furnace with respect to a heat treatment time so as to impart a temperature hysteresis to the silicon single crystal upon growing the silicon single crystal having a desired defect region or defect-free region from the silicon melt.
COPYRIGHT: (C)2008,JPO&INPIT
ONO NAOKI
| JPH11349394A | 1999-12-21 | |||
| JP2005142434A | 2005-06-02 | |||
| JP2007284323A | 2007-11-01 | |||
| JPH0393700A | 1991-04-18 | |||
| JPH0741389A | 1995-02-10 |
Tadashi Takahashi
Masakazu Aoyama
Yasuhiko Murayama