Title:
量子カスケードレーザ光源の製造方法
Document Type and Number:
Japanese Patent JP6981820
Kind Code:
B2
Abstract:
A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
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Inventors:
Akio Ito
Fujita Kajo
Daisuke Kawaguchi
Michigaki Tatsuo
Edamura Tadataka
Fujita Kajo
Daisuke Kawaguchi
Michigaki Tatsuo
Edamura Tadataka
Application Number:
JP2017171343A
Publication Date:
December 17, 2021
Filing Date:
September 06, 2017
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
G02F1/37; H01S5/343; H01S5/12; H01S5/227
Domestic Patent References:
| JP2017050307A | ||||
| JP2011243730A | ||||
| JP2008235750A | ||||
| JP2017045802A |
Foreign References:
| WO2016097780A1 |
Other References:
Seungyong Jung et al.,Terahertz difference-frequency quantum cascade laser sources on silicon,Optica,2016年12月22日,Vol. 4, Issue 1,pp.38-43
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Yasushi Naito
Yoshiki Kuroki
Kenichi Shibayama
Yasushi Naito