Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP6210170
Kind Code:
B2
Abstract:
A first film (3) is formed on a front surface of a semiconductor wafer (1). A second film (4) is formed on the first film (3). A surface protection film (5) is formed to cover the first film (3) and second film (4). After forming the surface protection film (5), a reverse surface of the semiconductor wafer (1) is etched with a chemical liquid. The first film (3) is formed on an outer peripheral section of the semiconductor wafer (1). The second film (4) is not formed on the outer peripheral section of the semiconductor wafer (1). The first film (3) and the surface protection film (5) are adhered to each other in the outer peripheral section of the semiconductor wafer (1). The first film (3) has a higher adhesion to the surface protection film (5) than the second film (4).
More Like This:
Inventors:
Shunichi Watanabe
Application Number:
JP2016574573A
Publication Date:
October 11, 2017
Filing Date:
February 12, 2015
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/306
Domestic Patent References:
| JP2008218919A | ||||
| JP200564326A | ||||
| JP2002280355A | ||||
| JP1135027A |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno