MASK PATTERN FOR FINE STRUCTURE FORMING EXPERIMENT

Japanese Patent JP3762999

B2

PROBLEM TO BE SOLVED: To calculate etching rate by easily and accurately measuring change in the absolute height when calculating, with the experiment, the etching rate of the mask portion and the region other than the mask portion.
SOLUTION: Since the processing to form a fine structure of nanometer scale is conducted by forming the surface to function as an etching mask with the FFM process and ultra-fine mechanical process with irradiation of FIB or the other method to a single-crystal silicon, and then dissolving a part other than the mask with the etchant; the square SiO2 mask pattern of about 40μm × 40μm as the reference surface for measuring the height is formed at the area near the processing portion for conducting the experiment to collect the basic data of the processing conditions. The etching rate of the mask and etching portions can be measured easily and accurately by referring to this reference surface. In this case, numerals of 00 to 99 are formed for identifying the processing conditions at the area near the processing portion.

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JP7035171	Pore formation in the substrate
WO/2004/091838	METHOD OF SOLDERING OR BRAZING ARTICLES HAVING SURFACES THAT ARE DIFFICULT TO BOND

Kashi Ashida
Koichi Shibata

JP2003314049A

April 05, 2006

September 05, 2003

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National Institute of Advanced Industrial Science and Technology

B81C1/00; H01L21/66; (IPC1-7): H01L21/66; B81C1/00

柴田浩一 他,集束イオンビーム照射とアルカリエッチングを併用した極微細加工(第2報),2003年度精密工学会春季大会学術講演会講演論文集,日本,精密工学会,2003年 3月 5日,p.53
廖国新 他,摩擦力顕微鏡(FFM)機構を利用した極微細加工に関する研究(第11報),理研シンポジウム「マイクロファブリケーション研究の最新動向」テキストVOL.12,日本,理化学研究所,2003年 6月19日,p.40

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