Title:
METHOD AND APPARATUS FOR LIQUID PHASE GROWTH
Document Type and Number:
Japanese Patent JPS5451379
Kind Code:
A
Abstract:
PURPOSE:To prevent the occurrence of surface defects such as flaws, slags, etc. on crystal growth surfaces and realize multilayer growth by flowing each solution on substrate by gravity and letting the solutions be fallen by the rotation of the substrate after the growth. CONSTITUTION:The entire part of the apparatus is heated up to growth initiation temperature and the vessel bottom part 8a is moved by moving an operating bar 11a to the right to let solution 9a flow onto the substrate 7. When the temperature is lowered at a constant rate of temperature lowering, the first layer grows on the substrate 1. Upon completion of the growth of the first layer, a rotating mechanism 5 is operrated to rotate a substrate stage 3 to flow the solution down into the solution receiver 2a of a lower boat 2. Next, the mechanism 5 is returned to the original position to return the stage 3 to the original horizontal posture. From this point on, the similar operations are repeated for the purpose of growing the second, third and fourth layers.
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Inventors:
UEDA OSAMU
Application Number:
JP11662577A
Publication Date:
April 23, 1979
Filing Date:
September 30, 1977
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B19/06; H01L21/208; (IPC1-7): B01J17/06; H01L21/208