Title:
METHOD AND DEVICE FOR GROWING SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH03295898
Kind Code:
A
Abstract:
PURPOSE:To obtain a large, long and high-quality SiC single crystal by using a split graphite crucible also used as a heating element and consisting of the upper crucible outer cylinder, crucible bottom and expansion crucible outer cylinder to be arranged between them. CONSTITUTION:An SiC single crystal substrate 23 is fixed at the mounting part 22 of a graphite lid 19. The crucible 28 consists of the graphite upper crucible outer cylinder 18, expansion crucible outer cylinder 21 and crucible bottom 20. A powder 26 contg. SiC as the raw material is placed in the crucible 28, and the distance 30 between the growth surface 27 of the substrate and the powder 26 is adjusted by the length of the cylinder 21. The powder 26 is heated, the sublimated SiC is deposited on the substrate 23 to grow a lumpy SiC single crystal 24. When the crystal growth is successively carried out, the residue after crystal growth in the crucible 28 is removed, fresh raw powder 26 is charged, the distance between the growth surface 29 and raw powder 26 surface is adjusted by the length of the outer cylinder 21, and a crystal is again grown.
Inventors:
KANETANI MASATOSHI
FUJIWARA YUICHIRO
MORIYA AKIHIRO
SHINOYAMA SEIJI
FUJIWARA YUICHIRO
MORIYA AKIHIRO
SHINOYAMA SEIJI
Application Number:
JP9759090A
Publication Date:
December 26, 1991
Filing Date:
April 16, 1990
Export Citation:
Assignee:
NIPPON STEEL CORP
International Classes:
C30B29/36; C30B23/00; (IPC1-7): C30B29/36
Attorney, Agent or Firm:
Mikio Hatta (1 outside)
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