METHOD AND DEVICE FOR THICKNESS MONITORING ON SITE IN CHEMICAL AND MECHANICAL POLISHING

Title:

METHOD AND DEVICE FOR THICKNESS MONITORING ON SITE IN CHEMICAL AND MECHANICAL POLISHING

Document Type and Number:

Japanese Patent JPH1170469

Kind Code:

A

Abstract:

To find the thickness of a substrate layer by constituting a film thickness monitor of an ellipsometer which observes the substrate via a monitoring channel and provides a display of the film thickness supported by the substrate.

An on site film thickness monitor 250 can be used for a polisher 200. In detail, openings 230, 245 in a belt 220 and a platen 240 are used for the on site monitoring of a substrate by a monitor. When the belt 220 is moved in the linear direction under the substrate in a CMP process, the opening 230 of the belt 220 moves above the opening 245 of the platen 240. Wen both openings 230, 245 are matched with each other, an optical circuit between the substrate and the film thickness monitor 250 is completed so that the on site monitoring can be implemented.

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Inventors:

PECEN JIRI
CHADDA SAKET
JAIRATH RAHUL
KRUSSEL WILBUR C

Application Number:

JP18677598A

Publication Date:

March 16, 1999

Filing Date:

May 28, 1998

Export Citation:

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Assignee:

LAM RES CORP

International Classes:

B24B37/20; B24B49/04; B24B49/12; B24D7/12; G01B11/06; (IPC1-7): B24B37/04; B24B49/04; B24B49/12

Attorney, Agent or Firm:

Minoru Nakamura (6 outside)

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