METHOD FOR FORMING DIELECTRIC THIN FILM, AND THIN FILM CAPACITOR COMPRISING THE DIELECTRIC THIN FILM

Japanese Patent JP2011073960

A

To provide a method for forming a dielectric thin film capable of expressing high tunability when used for a thin film capacitor and the like, and a thin film capacitor and a tunable device comprising a dielectric thin film obtained by the method.

When a dielectric thin film composed of Ba1-xSrxTiyO3 (wherein 0.2<x<0.6 and 0.9<y<1.1) is formed by a sol-gel method, the process from coating to firing is carried out 2-9 times. The thickness of the thin film formed after the first firing is set to be 20-80 nm, and the thickness of each thin film formed after the second to ninth firing is set to be 20 to <200 nm. Each firing from the first firing to the ninth firing is carried out by heating to a predetermined temperature within the range of 500-800°C at a heating rate of 1-50°C/min at atmospheric pressure. The total thickness of the dielectric thin film is set to be 100-600 nm.

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SAKURAI HIDEAKI
WATANABE TOSHIAKI
SOYAMA NOBUYUKI

JP2010192655A

April 14, 2011

August 30, 2010

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MITSUBISHI MATERIALS CORP

C01G23/00; H01B3/00; H01B3/12; H01G7/02; H01G7/06

JPH11260667A	1999-09-24
JP2007019432A	2007-01-25
JPH087649A	1996-01-12
JPH0912354A	1997-01-14
JPH0952713A	1997-02-25

Masayoshi Suda

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