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Title:
METHOD OF FORMING ELECTRODE OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3773282
Kind Code:
B2
Abstract:

PURPOSE: To reduce contact resistance between a metal electrode and semiconductor by sputtering the surface of the compound semiconductor containing at least gallium and nitrogen by using inactive gas and thereafter depositing the metal to form the electrode.
CONSTITUTION: GaN is used as one example of a compound semiconductor containing at least gallium and nitrogen. A cleaned GaN substrate is placed on a target in a chamber of a sputtering apparatus. Then, argon ion is implanted with a Kaufman type ion gun in a normal direction under the conditions of about 200V acceleration voltage and about 20μA/cm2 current density to sputter the target of the GaN substrate. Then, the GaN substrate is placed in the same chamber which is kept at a vacuum, and in the state nickel is deposited on the surface of the GaN substrate with ordinary sputtering. After the deposition, the deposited nickel is rendered to alloying. Thus, here is ensured a metal electrode which has several Ω low resistance as the contact resistance.


Inventors:
Koike, Masayoshi
Nagai, Seiji
Yamazaki, Shiro
Murakami, Masanori
Tsukui, Katsuyuki
Ishikawa, Hidenori
Application Number:
JP1995000094484
Publication Date:
May 10, 2006
Filing Date:
March 27, 1995
Export Citation:
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Assignee:
TOYODA GOSEI CO LTD
RES DEV CORP OF JAPAN
International Classes:
H01L21/28; H01L21/285; H01L29/45; H01L33/32; H01L33/40; (IPC1-7): H01L21/28; H01L33/00
Domestic Patent References:
JP3108779A
JP258326A
JP59130425A
Attorney, Agent or Firm:
藤谷 修