To provide a method capable of forming a resist pattern at a high aspect ratio having an excellent etching resistance by using a nanoimprint lithography.

The method for forming the resist pattern by the nanoimprint lithography contains a process for forming an organic layer 4 on a supporter 1, and the process for forming a resist layer 2 by using a chemical-amplifying negative resist composition comprising a silsesquioxane resin (A) on the organic layer 4. The method further contains the process for pushing a light transmission type mold 3 partially having a light shield 5 against the resist layer 2, and exposing the resist layer 2 from the mold 3, and the process for peeling the mold 3.

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