METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT USING TWO MASKS

Japanese Patent JP2014160839

A

PROBLEM TO BE SOLVED: To provide a method for forming a magnetic tunnel junction for magnetic random access memory using two masks.SOLUTION: A method comprises depositing, over an interlevel dielectric layer 36 containing a first interconnect metallization 37, a first electrode 30, a fixed magnetization layer 32, a tunneling barrier layer 12, a free layer 11 and a second electrode 6. An MTJ structure including the tunnel barrier layer, the free layer and the second electrode is defined above the first interconnect metallization by a first mask. A first passivation layer 40 encapsulates the MTJ structure, leaving the second electrode 6 exposed. A third electrode 15 is deposited in contact with the second electrode 6. A second mask is used to pattern a larger structure including the third electrode 15, the first passivation layer 40, the fixed magnetization layer 32 and the first electrode 30. A second dielectric passivation layer 8 covers a plurality of etched layers and the first interlevel dielectric layer 36.

JP2888815	[Title of Invention] Magnetic Memory
JP2008192916	MAGNETIC RANDOM ACCESS MEMORY AND ITS WRITING METHOD
JP2004221289	MAGNETIC MEMORY APPARATUS

KANG SEUNG H
XIA LI
GU SHIQUN
MATTHEW M NOWAK

JP2014077077A

September 04, 2014

April 03, 2014

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QUALCOMM INC

H01L27/105; H01L21/8246; H01L29/82; H01L43/08; H01L43/12

JP2006332174A	2006-12-07
JP2007521629A	2007-08-02

Masatoshi Kurata
Toshihiro Fukuhara
Nobuhisa Nogawa
Peak Takashi
Naoki Kono
Sunagawa 克
Iseki Mamoru 3
Tadashi Inoue
Tatsushi Sato
Okada Kishi
Mihoko Horiuchi

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