Title:
METHOD FOR MANUFACTURING NANO GAP ELECTRODE AND ELEMENT HAVING THE NANO GAP ELECTRODE MANUFACTURED BY THIS METHOD
Document Type and Number:
Japanese Patent JP3864229
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To manufacture a nano gap electrode of 5 nm or less without using the electron beam exposure of a high running cost.
SOLUTION: The resist pattern of a predetermined horizontal width is formed on a substrate, and a conductive material is obliquely deposited at an angle θ1 (0°<θ1<90°) with respect to a substrate plane. A first electrode layer is provided so as to form the gap of a predetermined width, and after a lift-off processing is performed, an electrode surface is etched and an electrode edge is made uneven. The resist patterns having a slit are again formed on both sides across the gap, and the conductive material is obliquely deposited at an angle θ2 (0°<θ2<θ1<90°) with respect to the substrate plane from a direction opposed to a direction of θ1. A second electrode layer is provided so as to form the gap of a width of 10 nm or less, the lift-off processing is performed, and next a current is made to flow between electrodes to break a short-circuited portion between the electrodes in an electric field.
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Inventors:
Yasuhisa Naito
Mizutani Wataru
Kawanishi Yuji
Mizutani Wataru
Kawanishi Yuji
Application Number:
JP2003307669A
Publication Date:
December 27, 2006
Filing Date:
August 29, 2003
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
International Classes:
B82B3/00; H01L29/41; H01L21/28; H01L21/285; H01L29/06; (IPC1-7): H01L29/41; B82B3/00; H01L21/28; H01L21/285; H01L29/06