To provide technique capable of suppressing, in the process of grinding the reverse surface of a semiconductor wafer, intermingling of grinding dusts occurring while grinding the reverse surface into the principal surface of the semiconductor wafer by improving adhesion with a protective tape in an outer peripheral part of the semiconductor wafer.

In a dicing region DR (end part), a negative type photosensitive polyimide resin film EPI is buried in an opening part OP2, therefore the negative type photosensitive polyimide resin film EPI, which is buried, and an adhesive ADH are tightly bonded together. Namely, the negative type photosensitive polyimide resin film EPI is buried in the opening part OP2 in the dicing region DR (end part), and the negative type photosensitive polyimide resin film EPI and the adhesive ADH are tightly bonded together, as a result, any gap does not occur in the dicing region DR (end part).