Title:
METHOD OF MANUFACTURING SILICON CRYSTALLINE THIN FILM
Document Type and Number:
Japanese Patent JP2003209229
Kind Code:
A
Abstract:
To enable the formation of a high-quality crystalline silicon thin film on a substrate of a different kind at a low cost.
An undercoat layer (2) is formed on a substrate (1) for formation of a thin film. A crystalline layer (3) is formed on a part or whole of the top thereof, and a fixing substrate (4) is bonded on top thereof. Then these are separated from the substrate (1) by removing the undercoat layer (2) to obtain a silicon crystalline thin film integrally formed with the fixing substrate (4).
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Inventors:
OKA FUMITO
MURAMATSU SHINICHI
SASAKI TADASHI
MURAMATSU SHINICHI
SASAKI TADASHI
Application Number:
JP2002008095A
Publication Date:
July 25, 2003
Filing Date:
January 17, 2002
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
H01L31/042; H01L21/02; H01L21/20; H01L21/336; H01L27/12; H01L29/786; H01L31/04; (IPC1-7): H01L27/12; H01L21/02; H01L21/20; H01L21/336; H01L29/786; H01L31/04; H01L31/042
Attorney, Agent or Firm:
Shigeru Kawasumi