METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE WAFER

Title:

METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE WAFER

Document Type and Number:

Japanese Patent JP2006124244

Kind Code:

A

Abstract:

To provide a method for producing an SiC single crystal which can produce a large-diameter and high quality SiC single crystal and to provide an SiC wafer comprising the SiC single crystal obtained from the method.

The method for producing an SiC single crystal comprises a step for cutting away or grooving a part of the peripheral region 15 of an SiC substrate 1, and a step for growing the SiC single crystal on the surface of the substrate which has been cut away or grooved as the seed substrate. The SiC wafer is composed of the SiC single crystal obtained from the method for producing an SiC single crystal and has the number of small tilt angle grain boundaries of 10 or less.

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Inventors:

SHIOMI HIROSHI
SASAKI MAKOTO
KINOSHITA HIROYUKI
HAYASHI TOSHIHIKO

Application Number:

JP2004316457A

Publication Date:

May 18, 2006

Filing Date:

October 29, 2004

Export Citation:

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Assignee:

SHIKUSUON KK
KANSAI ELECTRIC POWER CO
SUMITOMO ELECTRIC INDUSTRIES
MITSUBISHI CORP

International Classes:

C30B29/36

Attorney, Agent or Firm:

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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