Title:
多色性軟X線回折に基づいた半導体計測のための方法およびシステム
Document Type and Number:
Japanese Patent JP7181274
Kind Code:
B2
Abstract:
Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.
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Inventors:
Wack Daniel
Shcheglov Andrei
Hoddykin Oleg
Kuznetsov Alexander
Artemyev Nikolai
Friedman Michael
Shcheglov Andrei
Hoddykin Oleg
Kuznetsov Alexander
Artemyev Nikolai
Friedman Michael
Application Number:
JP2020501162A
Publication Date:
November 30, 2022
Filing Date:
July 11, 2018
Export Citation:
Assignee:
KLA Corporation
International Classes:
H01L21/66; G01B15/00
Domestic Patent References:
JP2017504045A | ||||
JP2015078835A |
Foreign References:
US20080273662 |
Attorney, Agent or Firm:
Patent Attorney Corporation YKI International Patent Office
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