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Title:
MICROWAVE ELEMENT MATERIAL AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JP3547089
Kind Code:
B2
Abstract:

PURPOSE: To provide the microwave element material which consists of a high quality, magnetic garnet single crystal having a small lowest resonance frequency and by which the magnetostatic wave or magnetic resonance is utilized and also to provide the production of the material.
CONSTITUTION: This material consists of a single crystal having composition represented by the general formula R3Fe5-1-Ma012 (wherein: R is at least one element selected from Y, La, Lu and Bi; M is at least one element selected from Al, Sc, Ga and In; 0≤a≤0.9), of which single crystal is formed on a substrate single crystal and has a ≤12.370&angst lattice constant. The material is produced by using as the substrate material a single crystal having composition represented by the formula Y3-zGdzGa5O12 (wherein 0≤iz≤2.97) and growing on this substrate an epitaxial film of a single crystal selected from those having composition represented by the formula R3Fe5-aMa012 (wherein R and M are defined above) so that the difference between the lattice constants of the substrate material and the epitaxial film is ≤0.005&angst by using the liquid phase epitaxy.


Inventors:
Satoru Fukuda
Masayuki Tanno
Toshihiko Ryuo
Application Number:
JP30367393A
Publication Date:
July 28, 2004
Filing Date:
December 03, 1993
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C30B29/28; H01P1/215; H01P7/00; H01P11/00; (IPC1-7): C30B29/28; H01P1/215; H01P7/00; H01P11/00
Domestic Patent References:
JP570143A
JP5980914A
JP61179415A
Attorney, Agent or Firm:
Kanji Arai
Naotaka Kono
Eiichiro Shimazaki