Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MOS TRANSISTOR HAVING SATURATED CURRENT INSENSIBLE TO TEMPERATURE AND CONSTANT-VOLTAGE GENERATOR USING THE SAME
Document Type and Number:
Japanese Patent JP2006190946
Kind Code:
A
Abstract:

To provide a MOS transistor insensible to a temperature, and to provide a constant-voltage generator which is embodied from the MOS transistor insensible to a temperature and is stable to a temperature change without using a temperature compensating resistor.

In this MOS transistor, the number of source contacts is adjusted for increasing a source contact resistance, and the number of source contacts is smaller than the number of drain contacts. Further, for compensating for decreasing a current value between a desired source and drain by increasing the contact resistance of the source contact, the ratio of a width to the length of a gate is adjusted, and the ratio of a width is increased to the length of the gate.


Inventors:
CHOI JUN-GI
HAN HI-HYUN
Application Number:
JP2005169957A
Publication Date:
July 20, 2006
Filing Date:
June 09, 2005
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
H01L29/78; H01L21/822; H01L21/8234; H01L21/8238; H01L27/04; H01L27/088; H01L27/092
Domestic Patent References:
JPS5992910U1984-06-23
JP2001210793A2001-08-03
JP2001085959A2001-03-30
Attorney, Agent or Firm:
Ichiro Kudo