Title:
【発明の名称】光検出器
Document Type and Number:
Japanese Patent JP3032209
Kind Code:
B2
Abstract:
PURPOSE:To obtain a photodetector having large variation in absorption end wavelength by a low voltage drive, high efficiency and wavelength selectivity by increasing the thickness of a well layer in a quantum wall structure, and composing the composition of the layer of InGaAlAs, InGaAsP or GaAlAs. CONSTITUTION:A photodetector is formed by growing an In0.52Al0.48As clad layer 2 on an InP substrate 1, forming a multiple quantum well structure 3 made of an InGaAlAs quantum well layer and an In0.52Al0.48As barrier layer thereon, forming an InAlAs clad layer 4 thereon, and further laminating an InGaAs cap layer 5 thereon. The mesa shape of a sample has 36mum of lateral width W and 55-340mum of mutual operation length L with a light. Thus, even if the composition of the material to be employed for a quantum well is selected to increase the well width, its absorption end energy is not changed, but can be secured to a useful wavelength, and since a large absorption end wavelength shift is provided even by a low voltage application, the photodetector having an efficient wavelength selectivity can be realized.
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Inventors:
Koichi Wakita
Isamu Kodaka
Masafumi Nakao
Isamu Kodaka
Masafumi Nakao
Application Number:
JP24455988A
Publication Date:
April 10, 2000
Filing Date:
September 30, 1988
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L31/0264; H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP62115786A | ||||
| JP62291184A | ||||
| JP5974618A | ||||
| JP63164279A | ||||
| JP63227065A | ||||
| JP1199478A |
Attorney, Agent or Firm:
Shigeru Kobayashi (2 outside)