Title:
不揮発性半導体記憶装置
Document Type and Number:
Japanese Patent JP4601287
Kind Code:
B2
Abstract:
Characteristics of a nonvolatile semiconductor memory device are improved. The memory cell comprises: an ONO film constituted by a silicon nitride film SIN for accumulating charge and by oxide films BOTOX and TOPOX disposed thereon and thereunder; a memory gate electrode MG disposed at an upper portion thereof; a select gate electrode SG disposed at a side portion thereof through the ONO film; a gate oxide film SGOX disposed thereunder. By applying a potential to a select gate electrode SG of a memory cell having a source region MS and a drain region MD and to the source region MS and by accelerating electrons flowing in a channel through a high electric field produced between a channel end of the select transistor and an end of an n-type doped region ME disposed under the memory gate electrode MG, hot holes are generated by impact ionization, and the hot holes are injected into a silicon nitride film SIN by a negative potential applied to the memory gate electrode MG, and thereby an erase operation is performed.
Inventors:
Tetsuya Ishimaru
Nozomi Matsuzaki
Hitoshi Kume
Nozomi Matsuzaki
Hitoshi Kume
Application Number:
JP2003420916A
Publication Date:
December 22, 2010
Filing Date:
December 18, 2003
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L27/115; G11C11/34; G11C16/02; G11C16/04; G11C16/10; G11C16/14; H01L21/8246; H01L21/8247; H01L29/51; H01L29/788; H01L29/792
Domestic Patent References:
| JP2003309193A |
Attorney, Agent or Firm:
Yamato Tsutsui