Title:
OXIDE DIELECTRIC, METHOD OF PRODUCING THE DIELECTRIC, PRECURSOR FOR OXIDE DIELECTRIC, SOLID ELECTRONIC DEVICE AND METHOD OF PRODUCING THE DEVICE
Document Type and Number:
Japanese Patent JP2015067475
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an oxide dielectric having excellent characteristics, a solid electronic device provided with the oxide dielectric, e.g. a high-frequency filter, a patch antennas, a capacitor, a semiconductor device or a micro-electromechanical system.SOLUTION: An oxide layer 30 composed of an oxide dielectric contains an oxide which has a crystalline phase of a pyrochlore crystal structure and comprises bismuth(Bi), niobium(Nb) and optionally unavoidable impurities, and, with the atomic number of bismuth(Bi) as 1, the atomic number of niobium(Nb) is 1.3 or more and 1.7 or less.
Inventors:
SHIMODA TATSUYA
INOUE SATOSHI
ARIGA TOMOKI
INOUE SATOSHI
ARIGA TOMOKI
Application Number:
JP2013202328A
Publication Date:
April 13, 2015
Filing Date:
September 27, 2013
Export Citation:
Assignee:
JAPAN ADV INST SCIENCE & TECH
International Classes:
C01G33/00; H01G4/10; H01G4/12; H01G4/33; H01L21/316; H01L21/822; H01L21/8246; H01L27/04; H01L27/105
Domestic Patent References:
| JPH05147933A | 1993-06-15 | |||
| JPH0959021A | 1997-03-04 |
Foreign References:
| WO2013069471A1 | 2013-05-16 | |||
| US5015461A | 1991-05-14 |
Attorney, Agent or Firm:
Hiroaki Kono