OXIDE FILM AND PROTON CONDUCTIVE DEVICE

Japanese Patent JP2015134699

A

PROBLEM TO BE SOLVED: To provide an oxide film and a proton conductive device having high proton conductivity at lower temperature than conventional.SOLUTION: There is provided an oxide film constituted by oxide having a perovskite crystal structure where the oxide has a composition represented by A(EG)O, where A is at least one element selected from Ba, Sr and Ca, E is at least one element selected from Zr, Hf, In, Ga and Al, G is at least one element selected from Y, La, Ce and Gd, x, y and z satisfy 0.2≤x≤0.5, 0.1≤y≤0.7 and z<3 and lattice parameters of the perovskite crystal structure, a, b and c satisfy following relational expression 0.3890≤a≤0.4190 and 0.95≤a/c<0.98, where a≤b