PURPOSE: To obtain a pattern forming material having high sensitivity, high resolution, and high contrast by prepg. the pattern forming material from a compsn. having a specified compsn. having also a sensitivity for ultraviolet rays of a specified wavelength, in combination with a resin, and a solvent.
CONSTITUTION: A pattern forming material is prepd. from a photosensitive body expressed by the general formula I, a resin, and a solvent. In formula I, each R1 and R2 is an H atom, alkyl group, alkenyl group, hydroxyalkyl group, etc.; R3 is an alkyl group, alkenyl group, hydroxyalkyl group, etc.; each R4 and R5 is an H atom, alkyl group, alkoxy group, nitro group, nitroso group, amino group, OH group, or phenyl group. By this constitution, a pattern forming material having etching resistance for excimer laser exposure having 249nm wavelength, high sensitivity, high resolution, and high contrast is obtd.
SASAKO MASARU
OGAWA KAZUFUMI
HASEGAWA MASAZUMI
TOYUKA MASAAKI
MATSUSHITA ELECTRIC IND CO LTD
Next Patent: JPH01140145