PURPOSE: To obtain a pattern of submicron order by composing a resist of lower and upper layers when forming a resist pattern on a substrate for an electronic device, first patterning the upper layer, then coating the exposed part with an organic silicone, and conducting dry etching of the lower layer with the silicone as a mask.
CONSTITUTION: A lower layer resist film 14 and an upper layer resist film 15 made of polyimide are laminated on a substrate 13, and the film 15 is formed in the desired pattern by a wafer stepper. At this time a step formed on the substrate 13 is buried with the film 14 so that the film 15 becomes uniformly thick and the film 14 performs a role of absorbing ultraviolet rays, thereby forming an ultrafine pattern of approx. 0.6μm. Thereafter, an Si-added layer 16 is formed of (CH3)2 on the exposed surface of the pattern of the film 15, reactively ion etched with the layer 16 as a mask to form a pattern of submicron order.
ODAKA ISAMU
UEKI MINEO
| JPS5723937A | 1982-02-08 | |||
| JPS5844715A | 1983-03-15 | |||
| JPS57202533A | 1982-12-11 |