PURPOSE: To obtain a photoconductor which can operate on a low operating voltage with low dark current by using a film essentially consisting of the oxide of a rare earth element as a blocking layer for electrons.
CONSTITUTION: An Al drum 10 subjected to mirror polishing is disposed in a magnetron sputtering device. The pressure in the device is reduced and a substrate 10 is heated. Ar and O2 are introduced into the device and an Lu2O3 layer 11 is formed to 1,000W8,000 thickness on the substrate by using the sintered body of Lu2O3 as a target with high-frequency electric power. The substrate 10 is then put into a plasma CVD device and is heated under the reduced pressure. GeF4, SiH4, and B2H6 are introduced into the device and an a-Si1-xGeX:H:F layer 12 added with boron is formed to 2W4μ with the high- frequency electric power. An a-Si:H layer 13 added with SiH4, B2H6 and boron is formed in succession thereof. Further a silicon carbide layer 14 is formed by SiH4 and CH4 to 1,000W2,000 thickness with the high-frequency electric power. The photosensitive body obtd. in the above-mentioned manner is packaged to a laser beam printer using a semiconductor laser as a light source, by which sharp printing is obtd. with the low operating voltage.
| JPS57158650 | AMORPHOUS SILICON PHOTOCONDUCTOR LAYER |
| JPWO2003015143 | Group III nitride semiconductor film and its manufacturing method |
| JPS6098438 | PHOTOCONDUCTIVE MEMBER |
MATSUOKA TOMIZO
TANAKA EIICHIRO
WATANABE MASANORI
