Title:
Photodetection device
Document Type and Number:
Japanese Patent JP5927334
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a light detection device capable of suppressing time resolution from being different between pixels and also improving time resolution furthermore.SOLUTION: A semiconductor light detection element 10 includes: a plurality of avalanche photodiodes APDs operating at a Geiger mode and formed inside a semiconductor substrate 1N; a plurality of quenching resistors R1 connected in series with respective avalanche photodiodes APDs and disposed on a main face 1Na side of the semiconductor substrate 1N; an electrode E3 to which the plurality of quenching resistors R1 are connected; and a through electrode TE connected to the electrode E3 and formed to penetrate through the semiconductor substrate 1N. The plurality of quenching resistors R1 are connected to the through electrode TE through the electrode E3, and the plurality of avalanche photodiodes APDs are connected in parallel to each other in a form where being connected in series with the quenching resistors R1, respectively.SELECTED DRAWING: Figure 14
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Inventors:
Terumasa Nagano
Nobuo Hosokawa
Satoshi Suzuki
Takashi Baba
Nobuo Hosokawa
Satoshi Suzuki
Takashi Baba
Application Number:
JP2015211694A
Publication Date:
June 01, 2016
Filing Date:
October 28, 2015
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/10; H01L31/02; H01L31/107
Domestic Patent References:
| JP2010535409A | ||||
| JP2010536186A | ||||
| JP2004165602A | ||||
| JP2001318155A | ||||
| JP2008542706A | ||||
| JP5791461B2 |
Foreign References:
| WO2008004547A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Yoshiki Kuroki
Kenichi Shibayama