PURPOSE: To promote fining even at the time of the large number of terminals by forming a switching means at a hierarchy apart from a storage region and projecting beams from the side where the hierarchy is not shaped.

CONSTITUTION: An n- epitaxial layer 103 is formed onto an n substrate 101, and a p base region 104 is shaped to the layer 103 and an n+ emitter region 106 into the region 104. A capacitor electrode 109 is formed onto an insulating layer 107 on such an n- epitaxial layer 103 while being opposed to the p base region 104. On the other hand, a p-n diode 115 (a switching means) is shaped into a single crystal silicon region 114, but an n region in the diode 115 is connected to the p base region 104 in a bipolar transistor by an electrode 116 and an electrode 111 to the p region 104, a collector electrode 112 as a transparent electrode is formed onto the rear of the n substrate 101, and beams are projected from the substrate 101 side. Accordingly, fining can be promoted easily even at the time of the large number of terminals, thus attaining the increase of density and the improvement of resolution.