PHOTORESIST AND METHOD FOR PATTERNING THE SAME

Title:

PHOTORESIST AND METHOD FOR PATTERNING THE SAME

Document Type and Number:

Japanese Patent JP2003131364

Kind Code:

A

Abstract:

To improve the adhesion strength between a photoresist and a base.

A negative photoresist 3 to transfer a photomask 4 to a semiconductor disk 1 contains an insoluble material which is made soluble by exposure. The soluble material is applied on the interface between the resist and the uppermost layer of the semiconductor disk 1 to adhere with the uppermost layer of the semiconductor disk 1. By the adhesion, the adhesion strength between the negative photoresist 3 and the base is improved. A positive photoresist contains a material which is made insoluble by exposure so as to transfer the photomask to a semiconductor disk. The soluble material is applied on the interface between the resist and the uppermost layer of the semiconductor disk so as to adhere with the uppermost layer of the semiconductor disk. By the adhesion, the adhesion strength between the positive photoresist and the base is improved.

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Inventors:

LEDERER KAY

Application Number:

JP2002226943A

Publication Date:

May 09, 2003

Filing Date:

August 05, 2002

Export Citation:

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Assignee:

INFINEON TECHNOLOGIES AG

International Classes:

G03F7/004; G03F7/085; G03F7/38; H01L21/027; H01L21/3205; H01L23/52; (IPC1-7): G03F7/004; G03F7/38; H01L21/027; H01L21/3205

Attorney, Agent or Firm:

Kenzo Hara (3 outside)

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