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Title:
PHOTOVOLTAIC POWER GENERATION ELEMENT
Document Type and Number:
Japanese Patent JP2014216334
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a photovoltaic power generation element having excellent power generation efficiency.SOLUTION: A photovoltaic power generation element 10 in which one side is used as the light incident surface includes an n-type crystal semiconductor substrate 11 having an uneven structure formed on one side, an n-type amorphous semiconductor thin film 13 laminated on one side of the n-type crystal semiconductor substrate 11, and a p-type amorphous semiconductor thin film 16 laminated on the other side of the n-type crystal semiconductor substrate 11. External quantum efficiency in the light having a wavelength of 400 nm is 75% or more.

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Inventors:
KOBAYASHI EIJI
HONDA TAKUYA
Application Number:
JP2013089443A
Publication Date:
November 17, 2014
Filing Date:
April 22, 2013
Export Citation:
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Assignee:
CHOSHU INDUSTRY CO LTD
International Classes:
H01L31/06
Attorney, Agent or Firm:
Fujio Nakamae
Fujimoto 勝誠
Yoshihiro Kida
Yohei Kiyoi



 
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