Title:
PLASMA SPUTTER TYPE NEGATIVE ION SOURCE
Document Type and Number:
Japanese Patent JP3286739
Kind Code:
B2
Abstract:
PURPOSE: To prevent clogging of a gas lead-in pipe for plasma generation by the cesium.
CONSTITUTION: An ion source chamber 1 consists of a chamber 1a and a flange 1b, and the inner surfaces of both members are covered by liners 10a and 10b to prevent the attachment of a cecium gas led in from a leading-in pipe 9 by condensing the cecium gas. The opening 3a of a pipe 3 to lead in a gas for generating plasma such as a xenon gas is formed between the flange 1a and the liner 10b. The xenon gas is led in to the ion source chamber 1 from the opening 3a through an assembly clearance 11 of the liner 10b. Even though the temperature of the chamber 1 is reduced, and the residual cesium is condensed and solidified, by stopping the operation of the ion source, the cesium gas is hardly turned in to the opening 3a, and as a result, the attachment of the cesium, the blinding of the opening, can be prevented. The ion source can be operated stably for a long period, consequently.
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Inventors:
Makoto Nakazawa
Kazuo Taguchi
Kazuo Taguchi
Application Number:
JP15959794A
Publication Date:
May 27, 2002
Filing Date:
June 20, 1994
Export Citation:
Assignee:
Nissin High Voltage Co., Ltd.
International Classes:
H01J27/20; H01J37/08; (IPC1-7): H01J37/08; H01J27/20
Domestic Patent References:
| JP325835A | ||||
| JP344855U |
Attorney, Agent or Firm:
Narita Sozo