POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

Japanese Patent JP2010055084

A

To provide a positive resist composition improved in sensitivity, low development defects, exposure latitude (EL), depth of focus (DOF) performance, shape, mask error enhancement factor (MEEF) performance, resolution and line-width roughness (LWR), and a pattern forming method using the same.

The positive resist composition includes (A) a resin which includes at least a repeating unit having a lactone structure, a repeating unit derived from hydroxystyrene, and a repeating unit derived from styrene having an acid decomposable group, and which is decomposed by the action of an acid to increase solubility in an alkali developer, and (B) a compound which generates an acid upon irradiation with actinic rays or radiation. The pattern forming method using the same is also provided.

JPH04311774	POSITIVE-TYPE PHOTO-SENSITIVE CATIONIC ELECTRODEPOSITION COATING RESIN COMPOSITION, ELECTRODEPOSITION BATH AND ELECTRODEPOSITION METHOD USING THE SAME
WO/2005/116762	RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
JP5008079	Photoimaging positive bottom antireflection film

SUGIYAMA SHINICHI
HIRANO SHUJI
YOKOYAMA SHIGEO

JP2009178460A

March 11, 2010

July 30, 2009

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FUJIFILM CORP

G03F7/039; C08F212/02; C08F220/26; G03F7/004; H01L21/027

JP2008129388A	2008-06-05
JP2007249192A	2007-09-27
JP2006301609A	2006-11-02
JP2005352278A	2005-12-22
JP2005534956A	2005-11-17
JP2006171568A	2006-06-29
JP2006011250A	2006-01-12
JP2008129388A	2008-06-05
JP2007249192A	2007-09-27

Takeshi Takamatsu
Kiyozumi Yazawa

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