PRODUCING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

Japanese Patent JP3893734

B2

PROBLEM TO BE SOLVED: To improve diffusion coefficient and to enable activation rating when an impurity layer is formed on a silicon carbide semiconductor through ion implantation.
SOLUTION: An impurity layer 51 (such as a base region, for example,) having a desired concentration is formed by repeatedly performing the process of implanting low-concentration ions to be an impurity concentration lower than the desired impurity concentration to a silicon carbide semiconductor substrate 50 and activating the ions implanted by the low-concentration ion implantation at a heat treatment temperature later. Thus, the diffusion coefficient at the diffusing of the implanted ions can be improved, in comparison with the case of forming an impurity layer by simultaneously performing high- concentration ion implantation, when heat treatment is performed after executing the low-concentration ion implantation and furthermore, the activation rate of ions can be improved.

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Eiichi Okuno
Atsushi Kojima

JP11383398A

March 14, 2007

April 23, 1998

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株式会社デンソー

H01L21/336; H01L29/16; H01L21/265; H01L29/12; H01L29/78; H01L29/24; (IPC1-7): H01L21/336; H01L21/265; H01L29/16; H01L29/78

Yoji Ito
Takahiro Miura

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