Title:
PRODUCTION OF PLATING FILM
Document Type and Number:
Japanese Patent JPH0499889
Kind Code:
A
Abstract:
PURPOSE:To reduce the time of plating for Cu electroplating on an amphoteric metal thin plate by first forming a Cu plating thin film of specified thickness in a copper pyrophosphate plating liquid and then providing a thick Cu plating film thereon in a copper sulfate plating liquid. CONSTITUTION:First, a Cu plating thin film is formed to 0.3-10mu thickness on an amphoteric metal thin plate as a cathode with using a copper pyrophosphate plating liquid (containing no glossing agent). Then as using the plate as a cathode, a thick Cu plating film is formed thereon with using a copper sulfate plating liquid. The first thin plating film is formed preferably to 0.3mu or more thickness to uniformly cover the whole surface of the metal and to <=10mu thickness because it takes long time to make a too thick film. By this method, the amphoteric metal does not dissolve in the plating liquids so that the copper plating film of enough adhesion strength can be obtained in a short time significantly reduced compared to the conventional plating method using a copper pyrophosphate plating liquid.
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Inventors:
KAWAGUCHI NAOYA
MIYABE SUSUMU
MIYABE SUSUMU
Application Number:
JP21572990A
Publication Date:
March 31, 1992
Filing Date:
August 17, 1990
Export Citation:
Assignee:
ASAHI CHEMICAL IND
International Classes:
C25D3/38; H05K1/09; (IPC1-7): C25D3/38; H05K1/09
Next Patent: SILVER ELECTROPLATING BATH AND METHOD