Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5363871
Kind Code:
A
Abstract:
PURPOSE:To realize a semiconductor device of a high density by burying insulators at high accuracy without deforming the recesses provided in a semiconductor substrate and forming the surface flat.
Inventors:
OOSONE TAKASHI
Application Number:
JP13934276A
Publication Date:
June 07, 1978
Filing Date:
November 18, 1976
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L29/78; H01L21/31; H01L21/76; H01L29/76; (IPC1-7): H01L21/94; H01L29/76
Domestic Patent References:
| JPS5063881A | 1975-05-30 | |||
| JPS525287A | 1977-01-14 |